Vortex-line condensation in three dimensions: A physical mechanism for bosonic topological insulators

Bosonic topological insulators (BTI) in three dimensions are symmetry-protected topological phases (SPT) protected by time-reversal and boson number conservation {symmetries}. BTI in three dimensions were first proposed and classified by the group cohomology theory which suggests two distinct root states, each carrying a $\mathbb{Z}_2$ index. Soon after, surface anomalous topological orders were proposed to identify different root states of BTI, which even leads to a new BTI root state beyond the group cohomology classification. In this paper, we propose a universal physical mechanism via \textit{vortex-line condensation} {from} a 3d superfluid to achieve all {three} root states. It naturally produces bulk topological quantum field theory (TQFT) description for each root state. Topologically ordered states on the surface are \textit{rigorously} derived by placing TQFT on an open manifold, which allows us to explicitly demonstrate the bulk-boundary correspondence. Finally, we generalize the mechanism to $Z_N$ symmetries and discuss potential SPT phases beyond the group cohomology classification.Comment: ReVTeX 4.1 (published version

Microwave and hard X-ray emissions during the impulsive phase of solar flares: Nonthermal electron spectrum and time delay

On the basis of the summing-up and analysis of the observations and theories about the impulsive microwave and hard X-ray bursts, the correlations between these two kinds of emissions were investigated. It is shown that it is only possible to explain the optically-thin microwave spectrum and its relations with the hard X-ray spectrum by means of the nonthermal source model. A simple nonthermal trap model in the mildly-relativistic case can consistently explain the main characteristics of the spectrum and the relative time delays

Robot skill learning through human demonstration and interaction

Nowadays robots are increasingly involved in more complex and less structured tasks. Therefore, it is highly desirable to develop new approaches to fast robot skill acquisition. This research is aimed to develop an overall framework for robot skill learning through human demonstration and interaction. Through low-level demonstration and interaction with humans, the robot can learn basic skills. These basic skills are treated as primitive actions. In high-level learning, the complex skills demonstrated by the human can be automatically translated into skill scripts which are executed by the robot. This dissertation summarizes my major research activities in robot skill learning. First, a framework for Programming by Demonstration (PbD) with reinforcement learning for human-robot collaborative manipulation tasks is described. With this framework, the robot can learn low level skills such as collaborating with a human to lift a table successfully and efficiently. Second, to develop a high-level skill acquisition system, we explore the use of a 3D sensor to recognize human actions. A Kinect based action recognition system is implemented which considers both object/action dependencies and the sequential constraints. Third, we extend the action recognition framework by fusing information from multimodal sensors which can recognize fine assembly actions. Fourth, a Portable Assembly Demonstration (PAD) system is built which can automatically generate skill scripts from human demonstration. The skill script includes the object type, the tool, the action used, and the assembly state. Finally, the generated skill scripts are implemented by a dual-arm robot. The proposed framework was experimentally evaluated

Essay on Firm Inventory and Innovation Behavior

This dissertation studies firm’s decisions on inventory investment and innovation activities. The first chapter examines firm inventory behavior. It resolves and simulates the production smoothing/buffer stock model using different sets of parameters. It shows that the relationship between a sales shock and inventory investment could be ambiguous which is different from previous predictions. The production smoothing/buffer stock model and the (S, s) model of inventory are tested using a rich Chinese firm-level dataset covering 769 manufacturing firms from 1980 to 1989, and I find that sales are positively correlated with inventory for raw materials, but negatively correlated with finished goods inventory in most cases. These findings are consistent with the theoretical predictions from the production smoothing/buffer stock model and the (S, s) model, contradicting previous test results. The second chapter examines the relationship between process innovation and market competition. I find that increased competition will shrink the demand facing each firm, and firms will have less incentive for process innovation whether the innovation outcome is deterministic or stochastic. However, when the number of firms in the market is proportional to the demand and both increase, then increased price elasticity will induce firms to devote more effort to conduct process innovation when innovation is deterministic; and under the stochastic case an inverted-U shape relation between innovation effort and market competitiveness is identified. Furthermore, when the number of firms is endogenous, the innovation incentive grows with the size of the market

First Experimental Demonstration of Gate-all-around III-V MOSFET by Top-down Approach

The first inversion-mode gate-all-around (GAA) III-V MOSFETs are experimentally demonstrated with a high mobility In0.53Ga0.47As channel and atomic-layer-deposited (ALD) Al2O3/WN gate stacks by a top-down approach. A well-controlled InGaAs nanowire release process and a novel ALD high-k/metal gate process has been developed to enable the fabrication of III-V GAA MOSFETs. Well-behaved on-state and off-state performance has been achieved with channel length (Lch) down to 50nm. A detailed scaling metrics study (S.S., DIBL, VT) with Lch of 50nm - 110nm and fin width (WFin) of 30nm - 50nm are carried out, showing the immunity to short channel effects with the advanced 3D structure. The GAA structure has provided a viable path towards ultimate scaling of III-V MOSFETs.Comment: IEEE IEDM 2011 pp. 769-772; Structures are valuable for low-dimensional physics stud